收藏本站
W971GG6JB
9. OPERATION MODE
9.1
Command Truth Table
COMMAND
Bank Activate
CKE
Previous
Cycle
H
Current
Cycle
H
BA2
BA1
BA0
BA
A12
A11
A10
Row Address
A9-A0
CS
L
RAS
L
CAS
H
WE
H
NOTES
1,2
Single Bank
Precharge
Precharge All
Banks
Write
Write with
Auto-precharge
Read
Read with
Auto-precharge
H
H
H
H
H
H
H
H
H
H
H
H
BA
X
BA
BA
BA
BA
X
X
Column
Column
Column
Column
L
H
L
H
L
H
X
X
Column
Column
Column
Column
L
L
L
L
L
L
L
L
H
H
H
H
H
H
L
L
L
L
L
L
L
L
H
H
1,2
1
1,2,3
1,2,3
1,2,3
1,2,3
(Extended)
Mode Register
H
H
BA
OP Code
L
L
L
L
1,2
Set
No Operation
Device
Deselect
Refresh
Self Refresh
Entry
Self Refresh
Exit
Power Down
Mode Entry
Power Down
Mode Exit
H
H
H
H
L
H
L
X
X
H
L
H
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
L
L
H
L
H
L
H
L
H
X
L
L
X
H
X
H
X
H
H
X
L
L
X
H
X
H
X
H
H
X
H
H
X
H
X
H
X
H
1
1
1
1,4
1,4,5
1,6
1,6
Notes:
1. All DDR2 SDRAM commands are defined by states of CS , RAS , CAS , WE and CKE at the rising edge of the clock.
2. Bank addresses BA [2:0] determine which bank is to be operated upon. For (E)MRS BA selects an (Extended) Mode Register.
3. Burst reads or writes at BL = 4 can not be terminated or interrupted. See “ Burst Interrupt ” in section 8.5 for details.
4. V REF must be maintained during Self Refresh operation.
5. Self Refresh Exit is asynchronous.
6. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the
refresh requirements outlined in section 8.9.
Publication Release Date: Sep. 24, 2013
- 31 -
Revision A09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
W9725G6IB-25 IC DDR2-800 SDRAM 256MB 84-WBGA
W9725G6JB25I IC DDR2 SDRAM 256MBIT 84WBGA
W9725G6KB-25I IC DDR2 SDRAM 256MBIT 84WBGA
W972GG6JB-3I IC DDR2 SDRAM 2GBITS 84WBGA
W9751G6IB-25 IC DDR2-800 SDRAM 512MB 84-WBGA
W9751G6KB-25 IC DDR2 SDRAM 512MBIT 84WBGA
W9812G6JH-6I IC SDRAM 128MBIT 54TSOPII
相关代理商/技术参数
W971GG6JB-25I 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY
W971GG6JB25ITR 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-800, X16, IND TEMP
W971GG6JB25TR 制造商:Winbond Electronics Corp 功能描述:NR, DDR2-800, X16
W971GG6JB-3 制造商:Winbond Electronics Corp 功能描述:1GBIT DDRII
W971GG6KB-18 制造商:Winbond Electronics Corp 功能描述:1G, DDR2-1066, X16 制造商:Winbond Electronics Corp 功能描述:IC MEMORY
W971GG8JB 制造商:WINBOND 制造商全称:Winbond 功能描述:16M × 8 BANKS × 8 BIT DDR2 SDRAM
W971GG8JB-25 功能描述:IC DDR2 SDRAM 1GBIT 60WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘
W9725G6IB-25 功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR)